JPS5859616A - 弾性表面波素子 - Google Patents
弾性表面波素子Info
- Publication number
- JPS5859616A JPS5859616A JP15759381A JP15759381A JPS5859616A JP S5859616 A JPS5859616 A JP S5859616A JP 15759381 A JP15759381 A JP 15759381A JP 15759381 A JP15759381 A JP 15759381A JP S5859616 A JPS5859616 A JP S5859616A
- Authority
- JP
- Japan
- Prior art keywords
- single crystal
- surface acoustic
- acoustic wave
- layer
- aluminum nitride
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000010897 surface acoustic wave method Methods 0.000 title claims abstract description 60
- 239000013078 crystal Substances 0.000 claims abstract description 74
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 41
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 41
- 239000010703 silicon Substances 0.000 claims abstract description 41
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 30
- 230000000644 propagated effect Effects 0.000 claims description 2
- 239000000758 substrate Substances 0.000 abstract description 33
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 abstract description 3
- 229910017083 AlN Inorganic materials 0.000 abstract 1
- 239000010408 film Substances 0.000 description 29
- 239000006185 dispersion Substances 0.000 description 18
- 230000008878 coupling Effects 0.000 description 9
- 238000010168 coupling process Methods 0.000 description 9
- 238000005859 coupling reaction Methods 0.000 description 9
- 238000001514 detection method Methods 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 5
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 4
- 241000981595 Zoysia japonica Species 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 239000011787 zinc oxide Substances 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
- H03H9/02—Details
- H03H9/02535—Details of surface acoustic wave devices
- H03H9/02543—Characteristics of substrate, e.g. cutting angles
- H03H9/02574—Characteristics of substrate, e.g. cutting angles of combined substrates, multilayered substrates, piezoelectrical layers on not-piezoelectrical substrate
Landscapes
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15759381A JPS5859616A (ja) | 1981-10-05 | 1981-10-05 | 弾性表面波素子 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15759381A JPS5859616A (ja) | 1981-10-05 | 1981-10-05 | 弾性表面波素子 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5859616A true JPS5859616A (ja) | 1983-04-08 |
| JPH025329B2 JPH025329B2 (en]) | 1990-02-01 |
Family
ID=15653095
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15759381A Granted JPS5859616A (ja) | 1981-10-05 | 1981-10-05 | 弾性表面波素子 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5859616A (en]) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59231911A (ja) * | 1983-06-14 | 1984-12-26 | Clarion Co Ltd | 表面弾性波素子 |
| JPH01106514A (ja) * | 1987-10-19 | 1989-04-24 | Sanyo Electric Co Ltd | 弾性表面波素子 |
| JPH01125012A (ja) * | 1987-11-09 | 1989-05-17 | Sanyo Electric Co Ltd | 弾性表面波素子 |
| JPH0388406A (ja) * | 1989-04-11 | 1991-04-12 | Sanyo Electric Co Ltd | 弾性表面波素子 |
-
1981
- 1981-10-05 JP JP15759381A patent/JPS5859616A/ja active Granted
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59231911A (ja) * | 1983-06-14 | 1984-12-26 | Clarion Co Ltd | 表面弾性波素子 |
| JPH01106514A (ja) * | 1987-10-19 | 1989-04-24 | Sanyo Electric Co Ltd | 弾性表面波素子 |
| JPH01125012A (ja) * | 1987-11-09 | 1989-05-17 | Sanyo Electric Co Ltd | 弾性表面波素子 |
| JPH0388406A (ja) * | 1989-04-11 | 1991-04-12 | Sanyo Electric Co Ltd | 弾性表面波素子 |
| US5059847A (en) * | 1989-04-11 | 1991-10-22 | Sanyo Electric Co., Ltd. | Surface acoustic wave device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH025329B2 (en]) | 1990-02-01 |
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